表面物理與表面分析

前言

　　表面物理是凝聚態(tài)物理中的一個新興分支。如以1964年《表面科學》雜志的創(chuàng)刊作為這一新學科正式問世的標志，其歷史迄今正好為40年。自20世紀70年代中以來，隨著最強有力的表面分析工具———電子能譜儀的商品化，表面物理獲得了迅猛發(fā)展。為跟上這一發(fā)展勢頭、滿足對表面研究人才日益增長的需求，我們從80年代初開始為復旦大學物理系的研究生開設了《表面物理》和《表面分析技術》兩門課。本書是在歷年教案的基礎上精縮這兩門課的內(nèi)容后寫成的。為使其符合用作研究生入門教材的要求，我們力圖在書中給出簡捷的物理圖像，而不是冗長的數(shù)學推導，著重闡述什么是表面物理中最基本的問題以及如何從實驗上對這些問題進行研究，并盡可能將這一領域的最新研究進展都包括進去。書中的例子絕大部分來自原始研究論文，包括我們自己的論文?！　∽鳛橐婚T與化學、材料科學、信息技術乃至生物學有密切關聯(lián)的課程，《表面物理與表面分析》在內(nèi)容安排上可以有許多不同選擇。因此，如何從浩瀚的文獻中挑選出最合適的材料，使本書能在有限的篇幅范圍內(nèi)包含盡可能多的有價值信息，實在頗費斟酌。現(xiàn)在的內(nèi)容選擇是設想學習這門課的大部分學生將來不一定從事表面研究，但在他們的研究工作中遲早可能會有機會用某些表面分析技術表征 2 Surface Physics and Surface Analysis　　材料和樣品。因此，我們在書中收入的內(nèi)容除表面原子結構和表面電子態(tài)的基本知識外，還有適用于眾多研究領域的最常用的表面分析技術。至于以后專門從事表面科學某一領域研究或對此有興趣的人，很容易從圖書館或因特網(wǎng)找到最新的和進一步的參考讀物?！　”緯舶苏隆５谝?、六、七章由王迅撰寫，二至四章由楊新菊撰寫，五、八兩章由丁訓民撰寫。全書由王迅最后統(tǒng)稿。謹將此書獻給復旦大學100周年校慶。

內(nèi)容概要

　　This textbook provides an lntroduction to surface physics， a growing branch of condensed matter physics，by presenting some basic concepts and techniques commonly used in characterizing solid surfaces at a level suitable for senior undergraduate and new graduate students．The aim is to introduce readers to the fundamentals of modern surface science and relevant methodology from a physics perspective．　　The book consists of eight chapters． Chapter 1 gives an overview of the subject． Chapters 2, 3 and 4 are mainly concerned with surface atomic structures and the major techniques for structural analysis－electron diffraction and scanning probe microscopy. Chapter 5 deals with surface electronic states．Chapters 6，7 and 8 focus on various electron spectroscopies， Including Auger electron，X－ray and ultraviolet photoelectron spectroscopies for both composition and electron－state analyses．As a text， It is designed for use in a one－semester course，featuring the presentation of simple physical pictures rather than detailed mathematical derivations．The book will also be of interest to scientists and engineers working in any field where an overview of surface analysis is needed．

作者簡介

　　丁訓民，1946年7月出生于上海。1970年畢業(yè)于復旦大學物理系，留校任教至今。其間曾以訪問學者身份去德國、日本、瑞典、香港等國家和地區(qū)工作，現(xiàn)為復旦大學物理系教授。主要從事表面物理等課程的教學和半導體表面與界面等方面的研究，已在國內(nèi)外學術刊物上發(fā)表論文一百多篇，撰寫過《同步輻射應用概論》和《論表面分析及其在材料研究中的應用》中的部分章節(jié)。因在用電子能譜方法研究半導體表面的物理和化學特性方面作出貢獻，榮獲2003年上海市科技進步一等獎?！　钚戮?，1966年11月出生于浙江。1988年畢業(yè)于復旦大學物理系，1994年在復旦大學材料科學系獲得博士學位，留校任教至今?，F(xiàn)為復旦大學物理系副教授，從事表面物理的教學和科研工作，以及硅基低維材料的制備及性質(zhì)研究?！　⊥跹?，1934年4月生于上海。1960年1月復旦大學研究生畢業(yè)。1984年起任復旦大學教授，1996年起任復旦大學首席教授。1999年當選為中國科學院院士?，F(xiàn)從事半導體物理、表面和界面物理，以及硅基低維量子體系的研究。

書籍目錄

PREFACEChapter1 Introduction1.1 Characteristics of Surface1.1.1 Unique Characteristics of Surface1.1.2 The Subjects of Surface Physics1.2 Methodology of Surface Science1.2.1 General Idea1.2.2 Category of Surface analyticalTechnologies1.3 Electron Spectroscopy1.3.1 Energy Distribution of Secondary Electrons1.3.2 Mean Free Path and Surface Sensitivity1.4 Surface Cleaning Processes1.4.1 Clean Surface versusNative Surface1.4.2 Methods of Preparing Clean SurfacesChapter2 Surface Atomics tructures2.1 Two Dimensional Crystallography2.1.1 Periodicity and Symmetry of Surface Unit Cell2.1.2 PointGroup and Plane Group2.1.3 Nomenclature of Surface Structures2.1.4 Reciprocal Lattice2.2 Atomic Structures of Ideal Surfaces2.2.1 Surface Structures of Metals2.2.2 Surfaces of Crystalline Compounds and Alloys2.3 Surface Relaxation and Reconstruction2.3.1 Surface Relaxation2.3.2 Surface reconstruction2.4 Surface Defects2.4.1 PointDefects2.4.2 Dislocations2.4.3 Atomic StepsChapter3 Low Energy Electron Diffraction and Reflection High Energy Electron Diffraction3.1 Principles3.1.1 Brief of the Diffraction in Three Dimensions3.1.2 Electron Diffraction in Two Dimensions3.2 Apparatus3.2.1 LEED Optics3.2.2 Spot Profile Analysis LEED3.2.3 Measurement of I-V Curves3.2.4 Shield and Compensation of Stray Electromagnetic Field3.3 Pattern Recognition3.3.1 Diffraction Orders3.3.2 Pattern Transform3.3.3 LEED Patterns of Stepped Surfaces3.4 LEED I-V3.4.1 Experimental and Theoretical I-V Curves3.4.2 R Factor3.5 Reflection High Energy Electron Diffraction3.5.1 Principle3.5.2 RHEED Analysis3.5.3 RHEED Intensity Oscillation3.6 Appendix3.6.1 Compilation of LEED Patterns3.6.2 Compilation of RHEED PatternsChapter4 Scanning Probe Microscopy4.1 General Concept4.2 Scanning Tunneling Microscopy4.2.1 Basic Principle4.2.2 Apparatus4.2.3 WorkingModes and Conditions4.2.4 STM Imaging4.2.5 Scanning Tunneling Spectroscopy4.2.6 STM Nanofabrication and Atom Manipulation4.3 Atom ic ForceMicroscopy4.3.1 Principle4.3.2 Apparatus4.3.3 WorkingModes of AFM4.3.4 Lateral Force Microscopy4.4 Other Types of Scanning Probe Microscopy4.4.1 Scanning Magnetic Force Microscopy4.4.2 Scanning Near-field Optical Microscopy4.4.3 Ballistic Electron Emission MicroscopyChapter5 Surface Electronic States5.1 Existence of Localized Electronic States at Surfaces5.1.1 Bulk States and Surface States5.1.2 Surface States in One-dimensional Models5.2 Surface Dangling Bond States5.2.1 Dangling Bond and Its Hybrid5.2.2 Dangling Bond States at Reconstructed Surfaces5.2.3 Dangling Bond States and Fermi Level Pinning5.3 Adsorbate Induced Electronic States5.3.1 Adsorption Phenomena5.3.2 Adsorbate-induced Work Function Changes5.3.3 Metal-induced Gap States（MIGS）Chapter6 Auger Electron Spectroscopy6.1 Principle6.1.1 Auger Process6.1.2 Energy of Auger Electron6.1.3 Yield and Cross-section6.1.4 Differential Spectra and Count Spectra6.2 Apparatus and Experimental Methods6.2.1 Experimental Setup6.2.2 Experimental Conditions6.3 Qualitative and Quantitative Analysis6.3.1 Element Identification6.3.2 Quantitative Composition Analysis6.3.3 Chemical Analysis6.4 Depth Profiling6.4.1 Purpose and Methods6.4.2 Profile of Compositions6.4.3 Interface Location 1986.5 Scanning Auger Microscopy6.5.1 Line-scan6.5.2 Auger Map6.5.3 Spatial ResolutionChapter7 X-ray Photoelectron Spectroscopy7.1 Principle7.1.1 Three Step Process of Photoemission7.1.2 Binding Energy7.2 Apparatus7.2.1 X-ray Sources7.2.2 Electron Energy Analyzer7.2.3 Detectors7.3 Qualitative Analysis7.3.1 Energy Calibration7.3.2 Peak Discrimination7.3.3 Element Identification7.4 Quantitative Analysis7.4.1 Quantification Methods7.4.2 Background Subtraction7.4.3 Peak Decomposition7.4.4 Depth Profile and Depth Information7.5 Chemical States Studies7.5.1 Chemical Shift7.5.2 Charging Effect and Compensation7.6 Appendix-Electron binding energies of elements in periodic tableChapter8 Ultra-Violet Photoelectron Spectroscopy8.1 Principle8.1.1 UPS versus XPS8.1.2 Basic Process8.1.3 Selection Rules and Wavefunction Symmetry8.2 Light Sources8.2.1 Discharge Lamp8.2.2 Monochromator and Polarizer8.2.3 Special Synchrotron Radiation Sources8.3 Applications8.3.1 Identification of Surface Electronic States8.3.2 Mapping of Surface and Bulk Bands8.3.3 Identification of Adsorbates:Species and Adsorption SitesReferences

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