納米薄膜分析基礎(chǔ)

前言

對(duì)于國內(nèi)的物理學(xué)工作者和青年學(xué)生來講，研讀國外優(yōu)秀的物理學(xué)著作是系統(tǒng)掌握物理學(xué)知識(shí)的一個(gè)重要手段。但是，在國內(nèi)并不能及時(shí)、方便地買到國外的圖書，且國外圖書不菲的價(jià)格往往令國內(nèi)的讀者卻步，因此，把國外的優(yōu)秀物理原著引進(jìn)到國內(nèi)，讓國內(nèi)的讀者能夠方便地以較低的價(jià)格購買是一項(xiàng)意義深遠(yuǎn)的工作，將有助于國內(nèi)物理學(xué)工作者和青年學(xué)生掌握國際物理學(xué)的前沿知識(shí)，進(jìn)而推動(dòng)我國物理學(xué)科研和教學(xué)的發(fā)展。為了滿足國內(nèi)讀者對(duì)國外優(yōu)秀物理學(xué)著作的需求，科學(xué)出版社啟動(dòng)了引進(jìn)國外優(yōu)秀著作的工作，出版社的這一舉措得到了國內(nèi)物理學(xué)界的積極響應(yīng)和支持，很快成立了專家委員會(huì)，開展了選題的推薦和篩選工作，在出版社初選的書單基礎(chǔ)上確定了第一批引進(jìn)的項(xiàng)目，這些圖書幾乎涉及了近代物理學(xué)的所有領(lǐng)域，既有闡述學(xué)科基本理論的經(jīng)典名著，也有反映某一學(xué)科專題前沿的專著。在選擇圖書時(shí)，專家委員會(huì)遵循了以下原則：基礎(chǔ)理論方面的圖書強(qiáng)調(diào)“經(jīng)典”，選擇了那些經(jīng)得起時(shí)間檢驗(yàn)、對(duì)物理學(xué)的發(fā)展產(chǎn)生重要影響、現(xiàn)在還不“過時(shí)”的著作(如：狄拉克的《量子力學(xué)原理》)。反映物理學(xué)某一領(lǐng)域進(jìn)展的著作強(qiáng)調(diào)“前沿”和“熱點(diǎn)”，根據(jù)國內(nèi)物理學(xué)研究發(fā)展的實(shí)際情況，選擇了能夠體現(xiàn)相關(guān)學(xué)科最新進(jìn)展，對(duì)有關(guān)方向的科研人員和研究生有重要參考價(jià)值的圖書。這些圖書都是最新版的，多數(shù)圖書都是2000年以后出版的，還有相當(dāng)一部分是2006年出版的新書。因此，這套叢書具有權(quán)威性、前瞻性和應(yīng)用性強(qiáng)的特點(diǎn)。由于國外出版社的要求，科學(xué)出版社對(duì)部分圖書進(jìn)行了少量的翻譯和注釋(主要是目錄標(biāo)題和練習(xí)題)，但這并不會(huì)影響圖書“原汁原味”的感覺，可能還會(huì)方便國內(nèi)讀者的閱讀和理解?！八街梢怨ビ瘛?，希望這套叢書的出版能夠?yàn)閲鴥?nèi)物理學(xué)工作者和青年學(xué)生的工作和學(xué)習(xí)提供參考，也希望國內(nèi)更多專家參與到這一工作中來，推薦更多的好書。

內(nèi)容概要

　　現(xiàn)代科學(xué)技術(shù)（從材料科學(xué)到集成電路）已深入到納米層次。從薄膜到場效應(yīng)傳感器，研究的重點(diǎn)是如何把尺度從微米量級(jí)減小到納米量級(jí)。納米薄膜分析一書主要研究了材料表面及從表面到幾十乃至100納米深的結(jié)構(gòu)與構(gòu)成。主要討論了用入射粒子和光子來量化結(jié)構(gòu)并進(jìn)行成分和深度分析的材料表征方法?！　”緯懻摿送ㄟ^入射光子或粒子刻蝕納米材料來表征材料的方法，入射的粒子能夠激發(fā)出可測的粒子或光子，這正是表征材料的依據(jù)，納米尺度材料分析實(shí)驗(yàn)會(huì)用到大量入射粒子與待測粒子束的相互作用。其中較重要的有原子碰撞、盧瑟福背散射、離子遂道、衍射、光子吸收、輻射與非輻射陽縣躍遷以及核反應(yīng)。本書詳細(xì)介紹了各種分析和掃描探針顯微技術(shù)。

作者簡介

作者：(美國)阿爾弗德(T.J.Alford)

書籍目錄

Preface1. An Overview：Concepts，Units，and the Bohr Atom  1.1 Introduction  1.2 Nomenclature  1.3 Energies，Units，and Particles  1.4 Particle-Wave Duality and Lattice Spacing  1.5 The Bohr Model  Problems2. Atomic Collisions and Backscattering Spectrometry  2.1 Introduction  2.2 Kinematics of Elastic Collisions  2.3 Rutherford Backscattering Spectrometry  2.4 Scattering Cross Section and Impact Parameter  2.5 Central Force Scattering  2.6 Scattering Cross Section：Two-Body  2.7 Deviations from Rutherford Scattering at Low and High Energy  2.8 Low-Energy Ion Scattering  2.9 Forward Recoil Spectrometry  2.10 Center of Mass to Laboratory Transformation  Problems3. Energy Loss of Light Ions and Backscattering Depth Profiles  3.1 Introduction  3.2 General Picture of Energy Loss and Units of Energy Loss  3.3 Energy Loss of MeV Light Ions in Solids  3.4 Energy Loss in Compounds Bragg's Rule  3.5 The Energy Width in Backscattering  3.6 The Shape of the Backscattering Spectrum  3.7 Depth Profiles with Rutherford Scattering  3.8 Depth Resolution and Energy-Loss Straggling  3.9 Hydrogen and Deuterium Depth Profiles  3.10 Ranges of H and He Ions  3.11 Sputtering and Limits to Sensitivity  3.12 Summary of Scattering Relations  Problems4. Sputter Depth Profiles and Secondary Ion Mass Spectroscopy  4.1 Introduction  4.2 Sputtering by Ion Bombardment—General Concepts  4.3 Nuclear Energy Loss  4.4 Sputtering Yield  4.5 Secondary Ion Mass Spectroscopy (SIMS)  4.6 Secondary Neutral Mass Spectroscopy (SNMS)   4.7 Preferential Sputtering and Depth Profiles  4.8 Interface Broadening and Ion Mixing  4.9 Thomas-Fermi Statistical Model of the Atom  Problems5. Ion Channeling  5.1 Introduction  5.2 Channeling in Single Crystals  5.3 Lattice Location of Impurities in Crystals  5.4 Channeling Flux Distributions 89  5.5 Surface Interaction via a Two-Atom Model  5.6 The Surface Peak  5.7 Substrate Shadowing：Epitaxial Au on Ag(111)   5.8 Epitaxial Growth  5.9 Thin Film Analysis  Problems6. Electron-Electron Interactions and the Depth Sensitivity of Electron Spectroscopies  6.1 Introduction  6.2 Electron Spectroscopies：Energy Analysis  6.3 Escape Depth and Detected Volume  6.4 Inelastic Electron-Electron Collisions  6.5 Electron Impact Ionization Cross Section  6.6 Plasmons  6.7 The Electron Mean Free Path  6.8 Influence of Thin Film Morphology on Electron Attenuation  6.9 Range of Electrons in Solids  6.10 Electron Energy Loss Spectroscopy (EELS)  6.11 Bremsstrahlung  Problems7. X-ray Diffraction  7.1 Introduction  7.2 Bragg's Law in Real Space  7.3 Coefficient of Thermal Expansion Measurements  7.4 Texture Measurements in Polycrystalline Thin Films  7.5 Strain Measurements in Epitaxial Layers  7.6 Crystalline Structure  7.7 Allowed Reflections and Relative Intensities  Problems8. Electron Diffraction  8.1 Introduction  8.2 Reciprocal Space  8.3 Laue Equations  8.4 Bragg's Law  8.5 Ewald Sphere Synthesis  8.6 The Electron Microscope  8.7 Indexing Diffraction Patterns  Problems9. Photon Absorption in Solids and EXAFS  9.1 Introduction  9.2 The Schrodinger Equation  9.3 Wave Functions  9.4 Quantum Numbers，Electron Configuration,and Notation  9.5 Transition Probability  9.6 Photoelectric Effect Square-Well Approximation  9.7 Photoelectric Transition Probability for a Hydrogenic Atom  9.8 X-ray Absorption  9.9 Extended X-ray Absorption Fine Structure (EXAFS)  9.10 Time-Dependent Perturbation Theory  Problems10. X-ray Photoelectron Spectroscopy  10.1 Introduction  10.2 Experimental Considerations  10.3 Kinetic Energy of Photoelectrons  10.4 Photoelectron Energy Spectrum  10.5 Binding Energy and Final-State Effects  10.6 Binding Energy Shifts—Chemical Shifts  10.7 Quantitative Analysis  Problems11. Radiative Transitions and the Electron Microprobe  11.1 Introduction  11.2 Nomenclature in X-Ray Spectroscopy  11.3 Dipole Selection Rules  11.4 Electron Microprobe  11.5 Transition Rate for Spontaneous Emission  11.6 Transition Rate for Kα Emission in Ni  11.7 Electron Microprobe：Quantitative Analysis  11.8 Particle-Induced X-Ray Emission (PIXE)  11.9 Evaluation of the Transition Probability for Radiative Transitions  11.10 Calculation of the Kβ/Kα Ratio  Problems12. Nonradiative Transitions and Auger Electron Spectroscopy  12.1 Introduction  12.2 Auger Transitions  12.3 Yield of Auger Electrons and Fluorescence Yield  12.4 Atomic Level Width and Lifetimes  12.5 Auger Electron Spectroscopy  12.6 Quantitative Analysis  12.7 Auger Depth Profiles  Problems13. Nuclear Techniques：Activation Analysis and Prompt Radiation Analysis  13.1 Introduction  13.2 Q Values and Kinetic Energies  13.3 Radioactive Decay  13.4 Radioactive Decay Law  13.5 Radionuclide Production  13.6 Activation Analysis  13.7 Prompt Radiation Analysis  Problems14. Scanning Probe Microscopy  14.1 Introduction  14.2 Scanning Tunneling Microscopy  14.3 Atomic Force MicroscopyAppendix 1. Km for 4He+ as Projectile and Integer Target MassAppendix 2. Rutherford Scattering Cross Section of the Elements for 1 MeV4HeiAppendix 3. 4He+ Stopping Cross SectionsAppendix 4. Electron Configurations and Ionization Potentials of AtomsAppendix 5. Atomic Scattering FactorsAppendix 6. Electron Binding EnergiesAppendix 7. X-Ray Wavelengths (nm)Appendix 8. Mass Absorption Coefficient and DensitiesAppendix 9. KLL Auger Energies (eV)Appendix 10. Table of the ElementsAppendix 11. Table of Fluoresence Yields for K，L，and M ShellsAppendix 12. Physical Constants，Conversions，and Useful CombinationsAppendix 13. AcronymsIndex

章節(jié)摘錄

插圖：

編輯推薦

《納米薄膜分析基礎(chǔ)17(影印版)》主要研究了材料表面及從表面到幾十乃至100納米深的結(jié)構(gòu)與構(gòu)成。主要討論了用入射粒子和光子來量化結(jié)構(gòu)并進(jìn)行成分和深度分析的材料表征方法以及詳細(xì)介紹了各種分析和掃描探針顯微技術(shù)?！都{米薄膜分析基礎(chǔ)17(影印版)》可供物理學(xué)工作者參考學(xué)習(xí)。

圖書封面

圖書標(biāo)簽Tags

無

評(píng)論、評(píng)分、閱讀與下載

---

    納米薄膜分析基礎(chǔ) PDF格式下載

---